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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
September 2009
FDMS7672AS
N-Channel PowerTrench(R) SyncFETTM
30 V, 42 A, 4 m Features
Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification
Top
Bottom S S
Pin 1 S
D D D
5 6 7 8
4G 3 2 1
G
S S S
D Power 56
D
D
D
D
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS ID dv/dt EAS PD TJ, TSTG MOSFET dv/dt Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 42 83 19 90 2.6 60 46 2.5 -55 to +150 V/ns mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.7 50 C/W
Package Marking and Ordering Information
Device Marking FDMS7672AS Device FDMS7672AS Package Power 56
1
Reel Size 13 ''
Tape Width 12 mm
Quantity 3000 units
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(c)2009 Fairchild Semiconductor Corporation FDMS7672AS Rev.C
FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 1 mA, VGS = 0 V ID = 10 mA, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 18 500 100 V mV/C A nA
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 C VGS = 10 V, ID = 18 A Static Drain to Source On Resistance VGS = 7 V, ID = 16 A VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 18 A, TJ = 125 C Forward Transconductance VDS = 5 V, ID = 18 A 1.2 1.9 -5 3.2 3.5 4.3 4.1 97 4.0 4.5 5.2 5.2 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2120 735 90 1.1 2820 975 135 2.2 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 18 A VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 12 5 28 4 33 15 6.5 4.0 21 10 44 10 46 22 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2 A VGS = 0 V, IS = 18 A (Note 2) (Note 2) 0.48 0.80 26 26 0.9 1.3 42 42 V ns nC
IF = 18 A, di/dt = 300 A/s
Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 60 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7672AS Rev.C
2
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25 C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
90
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A)
12
VGS = 3 V
10 8
VGS = 3.5 V
60
VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
6 4 2 0
VGS = 4 V VGS = 10 V VGS = 4.5 V
30
VGS = 3 V
0 0.0
0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
0
30
60
90
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
12
SOURCE ON-RESISTANCE (m)
1.5
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.3 1.2 1.1 1.0 0.9 0.8
ID = 18 A VGS = 10 V
ID = 18 A
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
10 8 6 4 2
TJ = 25 oC
rDS(on), DRAIN TO
TJ = 125 oC
0.7 -75
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
90
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
IS, REVERSE DRAIN CURRENT (A) VGS = 0 V
10
TJ = 125 oC
ID, DRAIN CURRENT (A)
60
VDS = 5 V
1 0.1 0.01
TJ = 25 oC
TJ = 125 oC
30
TJ = 25 oC TJ = -55 oC
TJ = -55 oC
0
1
2
3
4
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS7672AS Rev.C
3
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 18 A
3000
Ciss
CAPACITANCE (pF)
VDD = 10 V VDD = 20 V VDD = 15 V
8 6 4 2 0
1000
Coss
100 50 0.1
f = 1 MHz VGS = 0 V
Crss
0
5
10
15
20
25
30
35
1
10
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
90
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT (A)
10
TJ = 25 oC
60
VGS = 10 V
TJ = 100 oC
30
Limited by Package RJC = 2.7 C/W
o
VGS = 4.5 V
TJ = 125
oC
1 0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
300 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
3000
P(PK), PEAK TRANSIENT POWER (W)
100 s
1000
VGS = 10 V
10
THIS AREA IS LIMITED BY rDS(on)
1 ms 10 ms 100 ms 1s 10 s DC
100
1
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC
10
SINGLE PULSE RJA = 125 oC/W
0.01 0.01
0.1
1
10
100200
1 TA = 25 oC 0.5 -4 -3 -2 10 10 10
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS7672AS Rev.C
4
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.001
SINGLE PULSE RJA = 125 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-2
0.0001 -4 10
10
-3
10
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS7672AS Rev.C
5
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics (continued)
SyncFET Schottky body diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7672AS.
20
IDSS, REVERSE LEAKAGE CURRENT (A)
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
10
-2
TJ = 125 oC
15
CURRENT (A)
di/dt = 300 A/s
10
-3
TJ = 100 oC
10 5 0 -5
10
-4
TJ = 25 oC
10
-5
0
30
60
TIME (ns)
90
120
150
10
-6
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS7672AS SyncFET body diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses leakage versus drain-source voltage
FDMS7672AS Rev.C
6
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
Dimensional Outline and Pad Layout
FDMS7672AS Rev.C
7
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FDMS7672AS N-Channel PowerTrench(R) SyncFETTM
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM FPSTM PowerTrench(R) The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) Build it NowTM FRFET(R) Programmable Active DroopTM SM (R) Global Power Resource CorePLUSTM QFET TinyBoostTM Green FPSTM QSTM CorePOWERTM TinyBuckTM Green FPSTM e-SeriesTM Quiet SeriesTM CROSSVOLTTM TinyCalcTM GmaxTM RapidConfigureTM CTLTM TinyLogic(R) GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TM TinyPowerTM ISOPLANARTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM MegaBuckTM EZSWITCHTM* SmartMaxTM TinyWireTM TM* MICROCOUPLERTM SMART STARTTM TriFault DetectTM MicroFETTM SPM(R) TRUECURRENTTM* MicroPakTM STEALTHTM (R) MillerDriveTM SuperFETTM Fairchild(R) MotionMaxTM SuperSOTTM-3 Fairchild Semiconductor(R) Motion-SPMTM SuperSOTTM-6 UHC(R) (R) FACT Quiet SeriesTM Ultra FRFETTM OPTOLOGIC SuperSOTTM-8 FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) FAST(R) VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM FlashWriter(R) * Power-SPMTM
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I41
FDMS7672AS Rev.C
8
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